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MOCVD growth of GaN-based high electron mobility transistor structures /

Chen, Jr-Tai,

MOCVD growth of GaN-based high electron mobility transistor structures / Jr-Tai Chen. - 1 online resource (81 pages) : illustrations (some color). - Linköping Studies in Science and Technology Dissertations, Number 1662 0345-7524 ; . - Linköping studies in science and technology. Dissertations ; Number 1662. .

Includes bibliographical references.

ISBN: 9789175190730 (ebook)

Subjects--Topical Terms:
Semiconductors--Materials.
Epitaxy.

Index Terms--Genre/Form:
Electronic books.

LC Class. No.: TK7871.85 / .C446 2015

Dewey Class. No.: 621.38152

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MOCVD growth of GaN-based high electron mobility transistor structures /